![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_on.png)
![](/g/img/star_off.png)
Description
The BD433, BD435 , and BD437 are silicon epitaxial-base NPN power transistors in Jedec. SOT-32 plastic package, intented for use in medium power linear and DESCRIPTION. The UTC BD435 is a NPN epitaxial silicon transistor, it uses. UTCs advanced technology to provide the customers with high DC current gain, etc Jan 1, 2013 Parameter. Rating. Unit. VCEO. Collector-Emitter Voltage BD433. BD435 . BD437 . 22. 32. 45. V. VCBO. Collector-Base Voltage. BD433. BD435 . Apr 9, 2015 The UTC BD435 is a NPN epitaxial silicon transistor, it uses. UTCs advanced technology to provide the customers with high DC current gain MAXIMUM RATINGS (Ta=25 unless otherwise noted). Symbol. Parameter. Value. Unit. VCBO. Collector-Base Voltage BD433. BD435 . BD437. 22. 32. 45. V.
Part Number | BD435S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Fairchild |
Description | TRANS NPN 32V 4A TO-126 |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 32V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max) | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 5V |
Power - Max | 36W |
Frequency - Transition | 3MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-126 |
Image | ![]() |
BD435S
FARCHILD
11841
0.24
HK HEQING ELECTRONICS LIMITED
BD435S
FAIRCH
9841
1.5975
Acon Electronics Limited
BD435S
FAIRCHILP
9000
2.955
Redstar Electronic Limited
BD435S
FARICHILD
3550
4.3125
Yingxinyuan INT'L (Group) Limited
BD435S
FAIRCHLD
20500
5.67
Cicotex Electronics (HK) Limited