(4/5) based on 5 customer reviews
Description
The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is Jan 8, 2016 Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site . Weight*. UOM. Unit Type. HGTG30N60A4 . HGTG30N60A4 . Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. HGTG30N60A4 . TO247-3. FSSZ. FSSZ. 5.456725. NA. Nov 16, 2007 November 16, 2008. HGTG30N60A4_NL. HGTG30N60A4 . Fairchild Semiconductor. May 16, 2008. November 16, 2008. HGTG30N60B3D_NL.
| Part Number | HGTG30N60A4 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Fairchild |
| Description | IGBT 600V 75A 463W TO247 |
| Series | - |
| Packaging | Tube |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 75A |
| Current - Collector Pulsed (Icm) | 240A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 30A |
| Power - Max | 463W |
| Switching Energy | 280µJ (on), 240µJ (off) |
| Input Type | Standard |
| Gate Charge | 225nC |
| Td (on/off) @ 25°C | 25ns/150ns |
| Test Condition | 390V, 30A, 3 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Image |  |
HGTG30N60A4
FARCHILD
4500
1.34
Ysx Tech Co., Limited
HGTG30N60A4
FAIRCH
424
2.4225
FLOWER GROUP(HK)CO.,LTD
HGTG30N60A4
FAIRCHILP
1406
3.505
Nosin (HK) Electronics Co.
HGTG30N60A4
FARICHILD
6300
4.5875
SUMMER TECH(HK) LIMITED
HGTG30N60A4
FAIRCHLD
52
5.67
Yingxinyuan INT'L (Group) Limited
