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Description
PN2907 PN2907A . PNP SILICON TRANSISTOR. DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2906, PN2907 series types are silicon PNP epitaxial This UTC PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 600 mA. . ORDERING INFORMATION. 2013 1 1 PN2907A . PNP General. Purpose Amplifier. Features. Through Hole Package. Capable of 600mWatts of Power Dissipation and 600mA Ic. CXT2907A. CZT2907A. PN2907A . GROSS DIE PER 5 INCH WAFER. 45,900. PROCESS CP591X. Small Signal Transistor. PNP - Amp/Switch Transistor Chip. CZT2907A. PN2907A . Process. EPITAXIAL PLANAR. Die Size. 19 x 19 MILS. Die Thickness. 9.0 MILS. Base Bonding Pad Area. 3.5 x 4.3 MILS. Emitter Bonding
| Part Number | PN2907A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | Fairchild |
| Description | TRANS PNP 60V 0.8A TO-92 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Power - Max | 625mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
| Image |  |
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