Fairchild

Description

These devices are designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and MJ E1 3004,MJ E13005 N PN. COLLECTOR SATURATTON REGION. DC CURRENT GAIN o o. 1. 0.5. 0.3. 0.2 lc , COLLECTOR CURRENT (AMP). 0.1. May 15, 2012 VCES. Collector-emitter voltage (VBE = 0). 700. V. VCEO. Collector-emitter voltage (IB = 0). 400. V. VEBO. Emitter-base voltage (IC = 0). 9. V. IC. May 9, 2014 VCES. Collector-emitter voltage (VBE = 0). 700. V. VCEO. Collector-emitter voltage (IB = 0). 400. V. VEBO. Emitter-base voltage (IC = 0; IB = 1.5 The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. Thanks to an