Description
Product Overview. FCD5N60 : N-Channel SuperFET MOSFET 600V, 4.6A, 950m . For complete documentation, see the data sheet. SuperFET MOSFET is L2. 22uH. Inductor, Power, 2.1A. 0.350 x 0.300 inch RFB0807-220L. Coilcraft. 1. Q1. FCD5N60 . MOSFET, N-ch, 600V, 4.6A, 0.8 ohm. DPAK. FCD5N60 . Fairchild. Qrr. Typ. (nC. ) Ciss. Typ. (pF). Coss. Typ. (pF). Crss. Typ. (pF). Pac kag e. Typ e. FCD5N60 -F085. AEC Qualified. PPAP. Capable. Pb-free. Halide free. Active. N-. Mar 4, 2011 FCD5N60 are 0603 unless noted otherwise. 68uF, 25V - E-Cap. C9. 47 - 1210. R6. OSnub. BSTr n primary:secondary:auxilliary. Low-line n 7. tO-220. FcPF7n60. 600. 0.6. 25. 7. tO-220F. Fcd5n60 . 600. 0.95. 16. 4.6 to-252 (dPak). Fcd4n60. 600. 1.2. 12.8. 3.9 to-252 (dPak). FcP4n60. 600. 1.2. 12.8. 3.9.
Part Number | FCD5N60 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 600V 4.6A DPAK |
Series | Automotive, AEC-Q101, SuperFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 54W (Tj) |
Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 4.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
FCD5N60
FARCHILD
50550
0.09
HK HEQING ELECTRONICS LIMITED
FCD5N60
FAIRCH
5000000
0.8575
Hongkong Shengshi Electronics Limited
FCD5N60
FAIRCHILP
3000
1.625
Shenzhen Qiangneng Electronics Co., Ltd.
FCD5N60
FARICHILD
21000
2.3925
CIS Ltd (CHECK IC SOLUTION LIMITED)
FCD5N60_F085
FAIRCHLD
18000
3.16
MY Group (Asia) Limited