Part Number | FCP190N65F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 650V 20.6A TO220-3 |
Series | FRFET, SuperFET II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 20.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3225pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FCP190N65F
FARCHILD
3000
0.93
Shenzhen Qiangneng Electronics Co., Ltd.
FCP190N65F
FAIRCH
40319
1.835
ShenZhen hengjiaWei Electronic Co,.Ltd.
FCP190N65F
FAIRCHILP
6000
2.74
ZY (HK) TECHNOLOGY LIMITED
FCP190N65F
FARICHILD
85
3.645
Kinghead Electronics Co.,Limited
FCP190N65F
FAIRCHLD
20000
4.55
HK ALL-WIN TECHNOLOGY LIMITED