Description
Nov 1, 2013 FCP380N60E / FCPF380N60E N-Channel SuperFET. . II Easy-Drive MOSFET. 2012 Fairchild Semiconductor Corporation. FCP380N60E Jan 23, 2015 FCPF380N60E . TO220F-3 (DAP_CuAlBW)(G).csv. FSSZ. FSSZ. 2.108682. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Aug 9, 2014 Manufacturing Site. Weight*. UOM. Unit Type. FCPF380N60E . FCPF380N60E . TO-220F-3. (DAP_CuAlBW)(G). INTERNAL SUZHOU. 2.108682. Jul 1, 2013 Eco Status. Packaging Type. Quantity. FCPF380N60E . FCPF380N60E_F152. TO -220F. Green. Tube. 50. Symbol. Parameter. Test Conditions. Sep 25, 2013 34. 10.2. 6. TO220. FCPF380N60E . 600. 380. 34. 10.2. 6. TO220F. Note: 1. Part suffix: E = SuperFET II Easy Drive, Z = internal ESD diode.
Part Number | FCPF380N60E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 600V TO-220-3 |
Series | SuperFET II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1770pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 31W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 Full Pack |
Image |
FCPF380N60E
FARCHILD
29498
1.5
HK HEQING ELECTRONICS LIMITED
FCPF380N60E
FAIRCH
25000
2.2675
Ysx Tech Co., Limited
FCPF380N60E
FAIRCHILP
3000
3.035
Shenzhen Qiangneng Electronics Co., Ltd.
FCPF380N60E
FARICHILD
49850
3.8025
Z.H.T TECHNOLOGY HK LIMITED
FCPF380N60E
FAIRCHLD
200000
4.57
Shenzhen WTX Capacitor Co., Ltd.