Description
Datasheet May 1, 2014 G. S. D. MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FDA28N50F . Unit. VDSS. Aug 9, 2014 Unit Type. FDA28N50F . FDA28N50F . TO-3P-3. INTERNAL SUZHOU. 5.434650 g . Each. Terminal Finish. Base Alloy. J-STD-020 MSL Rating. Jan 21, 2015 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDA28N50F . TO3PN-3.csv. FSSZ. FSSZ. 5.43465. NA.
Part Number | FDA28N50F |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 500V 28A TO-3PN |
Series | UniFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5387pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
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