Part Number | FDB28N30TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 300V 28A D2PAK |
Series | UniFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 129 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FDB28N30TM
FARCHILD
32400
0.34
HK HEQING ELECTRONICS LIMITED
FDB28N30TM
FAIRCH
3000
1.455
Shenzhen Qiangneng Electronics Co., Ltd.
FDB28N30TM
FAIRCHILP
10000
2.57
HONG KONG HORNG SHING LIMITED
FDB28N30TM
FARICHILD
184
3.685
WIN AND WIN ELECTRONICS LIMITED
FDB28N30TM
FAIRCHLD
9000
4.8
Nosin (HK) Electronics Co.