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Description
Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDD8880 . TO252- 3 FDD8880 . FDD8880 . TO252-3. (NiLFAlBW) (G). Mar 20, 2017. 1.0. FSSZ. 0.29183 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy . IRF FDD8880 . R1. 1. 178k 1% resistor (0603). R2. 1. 5.23k 1% resistor ( 0603). R3. 1. 17.8k 1% resistor (0603). R4. 1. 10 5% resistor (0603). R5. 1. Q2,Q3. FDS8978. 2. FDS8978. Fairchild Semi. Q4,Q5,Q6,Q7,Q8,Q9. FDD8880 . 6. FDD8880 . Fairchild Semi. R12,R21,R30,R39. 13K/0.125W. 4. SMD 0805. Any. the higher gate charge FDD8880 , the advantage goes to the lower inductance MLP (FDMS8690). Fig. 35. D-PAK vs. MLP high-side efficiency; [VIN=12V,
| Part Number | FDD8880 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Fairchild |
| Description | MOSFET N-CH 30V 58A DPAK |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 35A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
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