(5/5) based on 10 customer reviews
Description
DATASHEET Nov 1, 2013 FDP036N10A . N-Channel PowerTrench. . MOSFET. 100 V, 214 A, 3.6 m . Features. RDS(on) = 3.2 m ( Typ.) @ VGS = 10 V, ID = 75 A. Jan 8, 2016 Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDP036N10A . FDP036N10A . TO220-3 (92.5-5-. 2.5DA_AlBW) (G). Jan 8, 2016 FDP036N10A . TO220-3 (92.5-5-2.5DA_AlBW) (G). FSSZ. FSSZ. 2.030182. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Mar 12, 2013 FDP036N10A . 100 V. 3.6 m . 89 nC. 214 A. 129 nC. TO-220. FDP045N10A. 100 V. 4.5 m . 57 nC. 164 A. 120 nC. TO-220. FDPF045N10A. May 31, 2011 The FDP083N15A_F102, FDB082N15A, and FDP036N10A n- channel PowerTrench MOSFETs provide 66% improved figure of merit, QG x
| Part Number | FDP036N10A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Fairchild |
| Description | MOSFET N-CH 100V TO-220AB-3 |
| Series | PowerTrench |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 116nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7295pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 333W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6 mOhm @ 75A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
Hot Offer
FDP036N10A
FAIRCHILP
112800
2.29
Dynamic Tronics Ltd
FDP036N10A
FARICHILD
2000
3.19
Luobei Electronics Co., Limited
FDP036N10A
FAIRCHLD
30000
4.09
Superior Electronics Limited
FDP036N10A
FARCHILD
32318
0.49
HK HEQING ELECTRONICS LIMITED
FDP036N10A
FAIRCH
10000
1.39
Xiefeng (HK) INT'L Electronics Limited
