(4/5) based on 15 customer reviews
Description
Datasheet FDS4935BZ . Dual 30 Volt P-Channel PowerTrench MOSFET. General Description. This P-Channel MOSFET has been designed specifically to improve the Jan 8, 2016 FDS4935BZ . SOIC-8 (CuBW-Gs). Jan 08, 2016. 1.0. GEM. 0.090751 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Nov 4, 2011 FDS4935BZ . Q5B. FDS4935BZ . 4. 6. 5. 3. R7. 49.9K. 0.5%. R7. 49.9K. 0.5%. C10 . 0.1uF. C10. 0.1uF. L1. 10uH. Toko. 892NAS-100M. L1. 10uH. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS4935BZ .
| Part Number | FDS4935BZ |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Fairchild |
| Description | MOSFET 2P-CH 30V 6.9A 8-SOIC |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 6.9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360pF @ 15V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Image |  |
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