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Description
Datasheet FDS6630A Rev. C1. FDS6630A . N-Channel Logic Level PowerTrenchTM MOSFET. General Description. This N-Channel Logic Level MOSFET is produced Jul 14, 2015 FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDS6630A . FDS6630A . SOIC-8 (CuBW-Gs). Jul 14, 2015. 1.0. SUBCON. 0.090751. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS6630A . SOIC- 8 Feb 3, 2014 Fairchild Semiconductor FDS6630A . Digi-Key. FDS6630ACT-ND. 1. R1. RES 0 Ohm 1/10W 0603 SMD. Panasonic - ECG. ERJ-3GEY0R00V.
| Part Number | FDS6630A |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Fairchild |
| Description | MOSFET N-CH 30V 6.5A 8SOIC |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 38 mOhm @ 6.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
FDS6630A
FARCHILD
33800
1.35
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FDS6630A
FAIRCH
7510
2.525
ONSTAR ELECTRONICS CO., LIMITED
FDS6630A
FAIRCHILP
9000
3.7
SUMMER TECH(HK) LIMITED
FDS6630A
FARICHILD
6000
4.875
Riking Technology (HK) Co., Limited
FDS6630A
FAIRCHLD
10000
6.05
Shenzhen WTX Capacitor Co., Ltd.
