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Description
DATASHEET Dec 1, 2008 FDS8878 Rev. C www.fairchildsemi.com. 2. MOSFET Maximum Ratings TA = 25 C unless otherwise noted. Symbol. Parameter. Ratings. Units. FDS8878 . Q4. FDS8690. C5. 0.1uF. R2. 10k. R1. 13.5k. R5. 10k. R4. 3.63k. C11. 4700pF. C10. 4700pF. C4. 22uFx2. TPS53129 RGE. (QFN ). DRVH2. VBST2. FDS8878 . L1. SPM 6530T. 1.5 H . Q2. FDS8878 . VO1. 1.8 V/4A. VO2. 1.05 V/4A. PGND. PGND. PGND. SGND. Input Voltage. 4.5 V to 24 V. Q4. FDS8690. L2. Jul 6, 2016 FDS8878 . SOIC-8 (CuBW-Gs). Jul 06, 2016. 1.0. GEM. 0.090751 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDS8878 . SOIC-8
| Part Number | FDS8878 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Fairchild |
| Description | MOSFET N-CH 30V 10.2A 8SOIC |
| Series | PowerTrench |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 897pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 10.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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