Fairchild

Description

Symbol. Parameter. Value. Symbol. VCES. Collector-Emitter Voltage (VGS = 0). 600. V. VECR. Reverse Battery Protection. 20. V. VGE. Gate-Emitter Voltage. Sep 9, 2011 ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or Aug 18, 2004 Absolute Maximum Ratings. Parameter. Max. Units. VCES. Collector-to-Emitter Voltage. 600. V. IC @ TC = 25 C. Continuous Collector Current. Jan 26, 2015 Reverse conducting IGBT with monolithic body diode. Features: Offers new higher breakdown voltage to 1350V for improved reliability. Dec 11, 2003 Symbol. Parameter. Units. VDS. Drain-Source Voltage. V. VGS. Gate-to-Source Voltage. V. ID @ TC = 25 C. Continuous Drain Current, VGS @