Description
Datasheet FQA65N20 Rev. C2 www.fairchildsemi.com. 1. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary. Aug 9, 2014 Mfr Item Name. Effective Date. Version. Manufacturing Site. Weight*. UOM. Unit Type. FQA65N20 . FQA65N20 . TO-3P-3. INTERNAL SUZHOU. Aug 8, 2014 FQA65N20 . TO-3P-3. SUZHOU. INTERNAL. SUZHOU. 5.4346500. Not. Applicable. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles.
Part Number | FQA65N20 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 200V 65A TO-3P |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7900pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 32.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PN |
Package / Case | TO-3P-3, SC-65-3 |
Image |
FQA65N20
FARCHILD
5220
0.74
HONGKONG LINK E-TECHNOLOGY CO., LIMITED
FQA65N20
FAIRCH
6300
1.7325
SUMMER TECH(HK) LIMITED
FQA65N20
FAIRCHILP
329
2.725
WIN AND WIN ELECTRONICS LIMITED
FQA65N20
FARICHILD
320
3.7175
FLOWER GROUP(HK)CO.,LTD
FQA65N20
FAIRCHLD
106492
4.71
Cicotex Electronics (HK) Limited