Part Number | FQB9N08TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 80V 9.3A D2PAK |
Series | QFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) |
Rds On (Max) @ Id, Vgs | 210 mOhm @ 4.65A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FQB9N08TM
FARCHILD
20000
0.77
Yingxinyuan INT'L (Group) Limited
FQB9N08TM
FAIRCH
40000
1.615
Far East Electronics Technology Limited
FQB9N08TM
FAIRCHILP
1000
2.46
MY Group (Asia) Limited
FQB9N08
FARICHILD
20000
3.305
Yingxinyuan INT'L (Group) Limited
FQB9N08
FAIRCHLD
40000
4.15
Far East Electronics Technology Limited