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Description
Nov 1, 2013 November 2013. Thermal Characteristics. Symbol. Parameter. FQD10N20LTM . Unit. R JC. Thermal Resistance, Junction to Case, Max. 2.48. Aug 9, 2014 Manufacturing Site. Weight*. UOM. Unit Type. FQD10N20LTM . FQD10N20LTM . TO-252-3 (NiLFAlBW). INTERNAL SUZHOU. 0.291830 g. Each. Aug 8, 2014 Assembly. Location. Package. Weight(g). MSL. Rating. FQD10N20LTM . TO-252- 3. (NiLFAlBW). SUZHOU. INTERNAL. SUZHOU. 0.2918300. 1.
| Part Number | FQD10N20LTM |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Fairchild |
| Description | MOSFET N-CH 200V 7.6A DPAK |
| Series | QFET |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 51W (Tc) |
| Rds On (Max) @ Id, Vgs | 360 mOhm @ 3.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Image |  |
FQD10N20LTM
FARCHILD
55100
0.35
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQD10N20LTM
FAIRCH
5000
1.6475
INSO (INCREDIBLE SOLUTION) HK LIMITED
FQD10N20LTM
FAIRCHILP
220360
2.945
Cinty Int'l (HK) Industry Co., Limited
FQD10N20LTM
FARICHILD
2000
4.2425
Yingxinyuan INT'L (Group) Limited
FQD10N20LTM
FAIRCHLD
11825
5.54
CIS Ltd (CHECK IC SOLUTION LIMITED)
