Part Number | FQE10N20CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 200V 4A TO-126 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 12.8W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-126 |
Package / Case | TO-225AA, TO-126-3 |
Image |
FQE10N20CTU
FARCHILD
6511
1.86
MY Group (Asia) Limited
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Cicotex Electronics (HK) Limited
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3.1425
Hongkong K.L.N Electronic Technology Co., Ltd.
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1295
3.57
MY Group (Asia) Limited