Part Number | FQE10N20LCTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 200V 4A TO-126 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 12.8W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-126 |
Package / Case | TO-225AA, TO-126-3 |
Image |
FQE10N20LCTU
FARCHILD
1000
0.6
MY Group (Asia) Limited
FQE10N20LCTU
FAIRCH
18000
1.23
MASSTOCK ELECTRONICS LIMITED
FQE10N20CTU
FAIRCHILP
1000
1.86
MY Group (Asia) Limited
FQE10N20CTU
FARICHILD
18000
2.49
MASSTOCK ELECTRONICS LIMITED
FQE10N20CTU
FAIRCHLD
720
3.12
ICK Internation (HK) Co., Limited