Part Number | FQI10N20CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 200V 9.5A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 72W (Tc) |
Rds On (Max) @ Id, Vgs | 360 mOhm @ 4.75A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI10N20CTU
FARCHILD
85
0.27
KDH SEMICONDUCTOR CO., LIMITED
FQI10N20CTU
FAIRCH
16000
1.2025
Finestock Electronics HK Limited
FQI10N20CTU
FAIRCHILP
5221
2.135
ATLANTIC TECHNOLOGY LIMITED
FQI10N20CTU
FARICHILD
26770
3.0675
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQI10N20CTU
FAIRCHLD
60
4
Yingxinyuan INT'L (Group) Limited