Part Number | FQI32N20CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 200V 28A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2220pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 156W (Tc) |
Rds On (Max) @ Id, Vgs | 82 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI32N20CTU
FARCHILD
1000
1.43
MY Group (Asia) Limited
FQI32N12V2
FAIRCH
5000
2.0575
G Trader Limited
FQI32N12V2TU
FAIRCHILP
1000
2.685
MY Group (Asia) Limited
FQI32N20CTU
FARICHILD
1832
3.3125
Hongkong K.L.N Electronic Technology Co., Ltd.
FQI32N20CTU
FAIRCHLD
1000
3.94
MY Group (Asia) Limited