Part Number | FQI3N90TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 900V 3.6A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) |
Rds On (Max) @ Id, Vgs | 4.25 Ohm @ 1.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI3N90TU
FARCHILD
1000
1.7
MY Group (Asia) Limited
FQI3N90TU
FAIRCH
16000
3.125
Finestock Electronics HK Limited
FQI3N90TU
FAIRCHILP
31829
4.55
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
FQI3N90TU
FARICHILD
129
5.975
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQI3N90TU
FAIRCHLD
2000
7.4
Yingxinyuan INT'L (Group) Limited