Part Number | FQI5N60CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 600V 4.5A I2PAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 3.13W (Ta), 100W (Tc) |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2.25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
FQI5N60CTU
FARCHILD
18650
0.85
Fairstock HK Limited
FQI5N60CTU
FAIRCH
5000
2.095
HK HEQING ELECTRONICS LIMITED
FQI5N60CTU
FAIRCHILP
55200
3.34
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQI5N60CTU
FARICHILD
9000
4.585
SUMMER TECH(HK) LIMITED
FQI5N60CTU
FAIRCHLD
2000
5.83
Yingxinyuan INT'L (Group) Limited