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Description
DATASHEET Jul 12, 2016 FQP19N20C . TO220-3 (92.5-5-. 2.5DA_AlBW). Jul 12, 2016. 1.0. FSSZ. 2.030183 g. Each. Manufacturing Process Information. Terminal Finish. Jul 12, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP19N20C . TO220-3 (92.5-5-2.5DA_AlBW). FSSZ. U1. BQ77905. VC19. VC18. VC17. VC16. 1 F. C1. VC20. 1.00k. R40. 1. 3. 2. Q2. FQP19N20C . 0.1 F. C30. 0.1 F. C31. 0.1 F. C29. 100. R45. 100. R46. BAT-. 1.
| Part Number | FQP19N20C |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Fairchild |
| Description | MOSFET N-CH 200V 19A TO-220 |
| Series | QFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Rds On (Max) @ Id, Vgs | 170 mOhm @ 9.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Image |  |
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