Description
Jul 12, 2016 FQP20N06 . TO220-3 (93.5-5-. 1.5DA_AlBW). Jul 12, 2016. 1.0. FSSZ. 2.03301 g. Each. Manufacturing Process Information. Terminal Finish. Nov 16, 2007 FQP20N06 . Fairchild Semiconductor. May 16, 2008. November 16, 2008. HGTP3N60A4D_NL. HGTP3N60A4D. Fairchild Semiconductor.
Part Number | FQP20N06 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 60V 20A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 53W (Tc) |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
FQP20N06
FARCHILD
10000
0.18
Hong Kong Capital Industrial Co.,Ltd
FQP20N06
FAIRCH
3000
0.4075
Bonase Electronics (HK) Co., Limited
FQP20N06
FAIRCHILP
10000
0.635
Belt (HK) Electronics Co
FQP20N06
FARICHILD
20000
0.8625
WIN AND WIN ELECTRONICS LIMITED
FQP20N06
FAIRCHLD
6000
1.09
Riking Technology (HK) Co., Limited