Description
Datasheet Nov 1, 2013 G. S. D. Absolute Maximum Ratings TC = 25 C unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQP22N30 . Unit. VDSS. Jan 8, 2016 FQP22N30 . TO220-3 (93.5-5-. 1.5DA_AlBW). Jan 08, 2016. 1.0. FSSZ. 2.033009 g. Each. Manufacturing Process Information. Terminal Finish. Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP22N30 . TO220-3 (93.5-5-1.5DA_AlBW). FSSZ.
Part Number | FQP22N30 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 300V 21A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 170W (Tc) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 10.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP22N30
FARCHILD
658
0.21
HK HEQING ELECTRONICS LIMITED
FQP22N30
FAIRCH
2800
0.6025
HXY Electronics (HK) Co.,Limited
FQP22N30
FAIRCHILP
1000
0.995
HK FEILIDI ELECTRONIC CO., LIMITED
FQP22N30
FARICHILD
458600
1.3875
Shenzhen WTX Capacitor Co., Ltd.
FQP22N30
FAIRCHLD
4000
1.78
Nosin (HK) Electronics Co.