Description
Nov 1, 2013 FQP55N10 . Description. This N-Channel enhancement mode power MOSFET is pro- duced using Fairchild Semiconductors proprietary planar Aug 8, 2014 Certificate of Compliance. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FQP55N10 . TO-220-3.
Part Number | FQP55N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 100V 55A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2730pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 155W (Tc) |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 27.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
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