Part Number | FQP6N80 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 800V 5.8A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 158W (Tc) |
Rds On (Max) @ Id, Vgs | 1.95 Ohm @ 2.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
FQP6N80
FARCHILD
28460
1.65
HK HEQING ELECTRONICS LIMITED
FQP6N80
FAIRCH
10000
2.3775
Hong Kong Capital Industrial Co.,Ltd
FQP6N80
FAIRCHILP
3425
3.105
Nosin (HK) Electronics Co.
FQP6N80
FARICHILD
476
3.8325
Yingxinyuan INT'L (Group) Limited
FQP6N80
FAIRCHLD
11100
4.56
CIS Ltd (CHECK IC SOLUTION LIMITED)