Part Number | FQPF19N10 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 100V 13.6A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 13.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 6.8A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF19N10
FARCHILD
2799
0.02
RX ELECTRONICS LIMITED
FQPF19N10
FAIRCH
4100
0.605
Cinty Int'l (HK) Industry Co., Limited
FQPF19N10
FAIRCHILP
5700
1.19
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
FQPF19N10
FARICHILD
6047
1.775
Yingxinyuan INT'L (Group) Limited
FQPF19N10
FAIRCHLD
3794
2.36
CIS Ltd (CHECK IC SOLUTION LIMITED)