Part Number | FQPF630 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 200V 6.3A TO-220F |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 6.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 3.15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F |
Package / Case | TO-220-3 Full Pack |
Image |
FQPF630
FARCHILD
1814
1.19
HK HEQING ELECTRONICS LIMITED
FQPF630
FAIRCH
9000
2.48
SUMMER TECH(HK) LIMITED
FQPF630 MOS()
FAIRCHILP
2689
3.77
CIS Ltd (CHECK IC SOLUTION LIMITED)
FQPF630
FARICHILD
200000
5.06
Shenzhen WTX Capacitor Co., Ltd.
FQPF630
FAIRCHLD
14000
6.35
MY Group (Asia) Limited