Fairchild

Description

Absolute Maximum Ratings TC = 25 C unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQT5P10 . Unit. VDSS. Drain-Source Voltage . -100. BMS-Notebook. ABSTRACT. This application note describes the methodology and circuits for stacking two bq77910As. When two. bq77910As are stacked, they FQT5P10 . M2. FQT5P10 . C9. 0.1u. C9. 0.1u. S1. 0. S1. 0. R421.82K. R28. NP. R28. NP. L5. 330Ohms. L5. 330Ohms. 1. 2. C11. 27n. C11. 27n. C2. 10u. C2. 10u . Application Note AN-955. Protecting IGBTs and MOSFETs from ESD. Table of Contents. 1. Introduction .. FQT5P10 . Fairchild. SOT-223. BSP321P. SOT-223. Small signal MOSFET. FQT7N10. Fairchild. SOT-223. BSP372. SOT-223. Small signal MOSFET. FQT7N10L.