Part Number | FQU1N60CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 600V 1A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU1N60CTU
FARCHILD
5040
1.44
HONG KONG HORNG SHING LIMITED
FQU1N60CTU
FAIRCH
65500
2.3225
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
FQU1N60CTU
FAIRCHILP
9000
3.205
SUMMER TECH(HK) LIMITED
FQU1N60CTU
FARICHILD
5040
4.0875
RX ELECTRONICS LIMITED
FQU1N60CTU
FAIRCHLD
4540
4.97
WIN AND WIN ELECTRONICS LIMITED