Part Number | FQU2N60CTU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 600V 1.9A IPAK |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) |
Rds On (Max) @ Id, Vgs | 4.7 Ohm @ 950mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
FQU2N60CTU
FARCHILD
180
1.63
SUNTOP SEMICONDUCTOR CO., LIMITED
FQU2N60CTU
FAIRCH
9000
2.6075
SUMMER TECH(HK) LIMITED
FQU2N60CTU
FAIRCHILP
176
3.585
WIN AND WIN ELECTRONICS LIMITED
FQU2N60CTU
FARICHILD
11010
4.5625
Ande Electronics Co., Limited
FQU2N60CTU
FAIRCHLD
2229
5.54
Yingxinyuan INT'L (Group) Limited