Description
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. Gate to Emitter Voltage. VGE. -. -. +/-20. V. Gate-Emitter Leakage Current, VGE = +/-20V. IGES. -. -. +/- 100. nA. Gate Threshold Voltage, IC=2mA. VGE(TH). 4.0. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not. Introduction. A common use of IR Standard Speed IGBTs is in the output inverter stage of the AC TIG1 welding machines. IR has designed application specific
Part Number | G40N60 |
Brand | Fairchild |
Image |
G40N60
FARCHILD
675
0.77
Hong Kong In Fortune Electronics Co., Limited
G40N60
FAIRCH
9501
1.7
ATLANTIC TECHNOLOGY LIMITED
G40N60
FAIRCHILP
1198
2.63
Yingxinyuan INT'L (Group) Limited
G40N60
FARICHILD
11002
3.56
CIS Ltd (CHECK IC SOLUTION LIMITED)
G40N60
FAIRCHLD
5876
4.49
Analog Technology Limited