Description
DATASHEET Jul 18, 2016 HUF75639S3 . TO262-3 (I2PAK). FSSZ. FSSZ. 1.578555. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Nov 16, 2007 HUF75639S3 . Fairchild Semiconductor. May 16, 2008. November 16, 2008. ISL9R860PF2_NL. ISL9R860PF2. Fairchild Semiconductor.
Part Number | HUF75639S3S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 100V 56A D2PAK |
Series | UltraFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 56A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
HUF75639S3S
FARCHILD
12000
1.4
Goodbest International Holding Limited
HUF75639S3S
FAIRCH
665
2.1425
HK HEQING ELECTRONICS LIMITED
HUF75639S3S
FAIRCHILP
2000
2.885
Xinye International Technology Limited
HUF75639S3S
FARICHILD
9604
3.6275
Cicotex Electronics (HK) Limited
HUF75639S3S
FAIRCHLD
63289
4.37
ATLANTIC TECHNOLOGY LIMITED