Description
Mar 21, 2011 SiHF820-E3. SnPb. IRF820 . SiHF820. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. 1/12. 12. IRF820 . N-channel 500V - 2.5 - 4A TO-220. PowerMesh II MOSFET. General features. Extremely high dv/dt capability. 100% avalnche tested. IRF420-423/ IRF820 -823. MTP2N45/2N50. N-Channel Power MOSFETs. 3.0A, 450V/500V www.artschip.com. 1. Description. These devices are n-channel, May 25, 2001 IRF820 . IRF830. 500 ON Semi NTP6N50 IR. IRF830. IRF840. 500 ON Semi NTP8N50 IR. IRF840. MTP4N50E 500 ON Semi NTP6N50 STM.
Part Number | IRF820 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 500V 2.5A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
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