Part Number | IRLW630ATM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 200V 9A I2PAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 755pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 69W (Tc) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRLW630ATM
FARCHILD
20000
1.11
Yingxinyuan INT'L (Group) Limited
IRLW630ATM
FAIRCH
1000
1.975
MY Group (Asia) Limited
IRLW630ATM
FAIRCHILP
10000
2.84
Far East Electronics Technology Limited
IRLW630ATM
FARICHILD
70000
3.705
ALPINE ELECTRONICS LTD
IRLW630ATM
FAIRCHLD
3000
4.57
Amos Electronics Co., Limited