Description
DATASHEET MJE210 . Feature. Low Collector-Emitter Saturation Voltage. High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) Complement to MJE200. STMicroelectronics PREFERRED. SALESTYPE s. PNP TRANSISTOR. DESCRIPTION. The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 MJE200. MJE210 . 0.02 t, TIME (ms). 0.01. 0.02. 0.05. 1.0. 2.0. 5.0. 10. 20. 50. 100 . 200. 0.1. 0.5. 0.2. 1.0. 0.2. 0.1. 0.05 r(t), TRANSIENT THERMAL RESISTANCE. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. COMMON. -Voff. 500 F. MPF930. MTP8P10. MUR105. MJE210 . MTP12N10. MTP8P10. 150 . 3 W. 100 F. Iout. A. RB1. RB2. 1 F. IC PEAK. VCE PEAK. VCE.
Part Number | MJE210 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | Fairchild |
Description | TRANS PNP 40V 5A TO225AA |
Series | - |
Packaging | Bulk |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
Power - Max | 15W |
Frequency - Transition | 65MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-225AA |
Image |
MJE210
FARCHILD
6184
0.39
HK HEQING ELECTRONICS LIMITED
MJE210
FAIRCH
38665
1.2925
Shenzhen Lichengda Technology Co.,LIMITED
MJE210
FAIRCHILP
3977
2.195
Belt (HK) Electronics Co
MJE210
FARICHILD
9414
3.0975
CIS Ltd (CHECK IC SOLUTION LIMITED)
MJE210
FAIRCHLD
50406
4
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED