Fairchild

Ref. [hkinfairchild20220620][hkinbrandcloudAMpd]

Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor

Rated (5/5) based on 14 customer reviews

Description

www.fairchildsemi.com. BS170 / MMBF170 Rev. E2. 1. March 2010. BS170 / MMBF170 . N-Channel Enhancement Mode Field Effect Transistor. General Jul 14, 2015 MMBF170 . SOT23-3 (Discrete-. G). Jul 14, 2015. 1.0. FSCP. 0.008706 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Feb 27, 2009 MMBF170 -13. MMBF170 -7. MMBF170 -7-F. 2N7002K-7. DMN601DMK-7. DMN601DWK-7. DMN601K-7. DMN601TK-7. DMN601VK-7. Jun 28, 2007 MMBF170 -7-F. 202. MMDT2222A-13. 17. ASMCC0096-7. 79. BAW56-13-01-F. 141. MMBT2222A-13. 203. MMDT2222A-7. 18. ASMCC0096-7-

Part Number MMBF170
Main Category Discrete Semiconductor Products
Sub Category Transistors - FETs, MOSFETs - Single
Brand Fairchild
Description MOSFET N-CH 60V 500MA SOT-23
Series -
Packaging Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 300mW (Ta)
Rds On (Max) @ Id, Vgs 5 Ohm @ 200mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Image Discrete Semiconductor Products - Transistors
Lowest Price: $0.01   Highest Price: $2.55
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