Fairchild

Description

5.0. A. TC = 100 C. 3.2. Pulsed Drain Currenta. IDM. 20. Linear Derating Factor. 0.59. W/ C. Single Pulse Avalanche Energyb. EAS. 230. mJ. Repetitive P-Channel HEXFET Power MOSFETs offer the designer a new option that can simplify circuitry while optimizing performance and parts count. In principle TPS61165-Q1 device is a boost converter that drives. 40-V Maximum Breakdown Voltage of Internal. LEDs in series. The boost converter runs at a 1.2-. DESCRIPTION. Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low General Description. The MAX5982A/MAX5982B/MAX5982C provide a com- plete interface for a powered device (PD) to comply with the IEEE 802.3af/at