Description
Datasheet Jun 1, 1996 June 1996. NDT452AP . P-Channel Enhancement Mode Field Effect Transistor. General Description. Features Jul 14, 2015 Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. NDT452AP . NDT452AP . SOT223-4. Jul 14, 2015. NDT452AP . SOT223-4.csv. FSCP. FSCP. 0.119. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Temp. Sn. Copper Alloy. voltage drop from BATT to system load at 1A load current with a NDT452AP MOSFET is ~60mV. The waste of battery power is ~60mW at 1A load. The transition BSP030. NDT452AP . BSP250. NDT454P. BSP250. NDT456P. BSP250. NTA4001NT1G. PMR280UN. NTA4153NT1G. PMR280UN. NTA7002NT1. PMR370XN.
Part Number | NDT452AP |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET P-CH 30V 5A SOT-223-4 |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta) |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 5A, 10V |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223-4 |
Package / Case | TO-261-4, TO-261AA |
Image |
NDT452AP
FARCHILD
4000
0.32
HONG KONG HORNG SHING LIMITED
NDT452AP
FAIRCH
180
1.175
SUNTOP SEMICONDUCTOR CO., LIMITED
NDT452AP
FAIRCHILP
12000
2.03
Shenzhen Yu Qin Xuan electronics Co., LT
NDT452AP
FARICHILD
101106
2.885
Shenzhen hsw Technology Co., Ltd
NDT452AP
FAIRCHLD
4000
3.74
RX ELECTRONICS LIMITED