Part Number | RFD3055LE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 60V 11A I-PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Vgs (Max) | ±16V |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 107 mOhm @ 8A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251AA |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
RFD3055LE
FARCHILD
2575
0.78
HK HEQING ELECTRONICS LIMITED
RFD3055LE
FAIRCH
1460
1.665
Gallop Great Holdings (Hong Kong) Limited
RFD3055LE
FAIRCHILP
313739
2.55
Cicotex Electronics (HK) Limited
RFD3055LE
FARICHILD
9000
3.435
SUMMER TECH(HK) LIMITED
RFD3055LE
FAIRCHLD
2000
4.32
Nosin (HK) Electronics Co.