Part Number | RFD3055LESM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Fairchild |
Description | MOSFET N-CH 60V 11A TO-252AA |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Rds On (Max) @ Id, Vgs | 107 mOhm @ 8A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
RFD3055LESM
FARCHILD
14820
0.45
HK HEQING ELECTRONICS LIMITED
RFD3055LESM
FAIRCH
200000
1.5725
Shenzhen WTX Capacitor Co., Ltd.
RFD3055LESM
FAIRCHILP
23039
2.695
Yingxinyuan INT'L (Group) Limited
RFD3055LESM
FARICHILD
289720
3.8175
Cicotex Electronics (HK) Limited
RFD3055LESM
FAIRCHLD
51
4.94
Gallop Great Holdings (Hong Kong) Limited