(5/5) based on 4 customer reviews
Description
SGW25N120 . Power Semiconductors. 1. Rev. 2.5 Nov. 09. Fast IGBT in NPT- technology. 40% lower Eoff compared to previous generation. Short circuit Edited by INFINEON Technologies AI PS DD HV3, L 7151-S, Edition 2, 03.09. 2003. IGBT Chip in NPT-technology. This chip is used for: . SGW25N120 . 1. 2. 3. Material Content Data Sheet. Sales Product Name. SGW25N120 . Issued. 29. August 2013. MA#. MA000792442. Package. PG-TO247-3-44. Weight*. Jan 17, 2008 2A. SGD02N120. SGB02N120. SGP02N120. 7A. SGB07N120. SGP07N120. 15A . SGB15N120. SGP15N120. SGW15N120. 25A. SGW25N120 . Jan 17, 2008 2A. SGD02N120. SGB02N120. SGP02N120. 7A. SGB07N120. SGP07N120. 15A . SGB15N120. SGP15N120. SGW15N120. 25A. SGW25N120 .
| Part Number | SGW25N120 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Fairchild |
| Description | IGBT 1200V 46A 313W TO247-3 |
| Series | - |
| Packaging | Tube |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 46A |
| Current - Collector Pulsed (Icm) | 84A |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 25A |
| Power - Max | 313W |
| Switching Energy | 3.7mJ |
| Input Type | Standard |
| Gate Charge | 225nC |
| Td (on/off) @ 25°C | 45ns/730ns |
| Test Condition | 800V, 25A, 22 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
| Image |  |
SGW25N120
FARCHILD
320
0.64
Gallop Great Holdings (Hong Kong) Limited
SGW25N120
FAIRCH
25
1.5975
FLOWER GROUP(HK)CO.,LTD
SGW25N120
FAIRCHILP
3120
2.555
Belt (HK) Electronics Co
SGW25N120
FARICHILD
468540
3.5125
Cicotex Electronics (HK) Limited
SGW25N120
FAIRCHLD
1000
4.47
Yingxinyuan INT'L (Group) Limited
